Complementary metal-oxide semiconductor compatible source of single photons at near-visible wavelengths

Abstract

We demonstrate on chip generation of correlated pairs of photons in the near-visible spectrum using a CMOS compatible PECVD Silicon Nitride photonic device. Photons are generated via spontaneous four wave mixing enhanced by a ring resonator with high quality Q-factor of 320,000 resulting in a generation rate of 950,000 $\frac{pairs}{mW}$. The high brightness of this source offers the opportunity to expand photonic quantum technologies over a broad wavelength range and provides a path to develop fully integrated quantum chips working at room temperature.

arXiv comment4 pages, 5 figures

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Cited by in corpus (4)

• Amplitude-Multiplexed readout of single photon detectors based on superconducting nanowires
• Single photon emission and single spin coherence of a nitrogen vacancy centre encapsulated in silicon nitride
• Silicon oxynitride platform for linear and nonlinear photonics at NIR wavelengths
• SiN integrated photonic components in the Visible to Near-Infrared spectral region