A 1.6:1 Bandwidth Two-Layer Antireflection Structure for Silicon Matched to the 190-310 GHz Atmospheric Window
arXiv:1803.05168 · doi:10.1364/AO.57.005196
Abstract
Although high-resistivity, low-loss silicon is an excellent material for THz transmission optics, its high refractive index necessitates antireflection treatment. We fabricated a wide-bandwidth, two-layer antireflection treatment by cutting subwavelength structures into the silicon surface using multi-depth deep reactive ion etching (DRIE). A wafer with this treatment on both sides has <-20 dB (<1%) reflectance over 190-310 GHz. We also demonstrated that bonding wafers introduces no reflection features above the -20 dB level, reproducing previous work. Together these developments immediately enable construction of wide-bandwidth silicon vacuum windows and represent two important steps toward gradient-index silicon optics with integral broadband antireflection treatment.
arXiv commentAccepted for publication in Applied Optics
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