Structures and Physical Properties of CsVSeO and VSeO
arXiv:1803.00703 · doi:10.1103/PhysRevB.98.075132
Abstract
By using solid-state reactions, we successfully synthesize new oxyselenides CsVSeO (x = 0, 0.5). These compounds containing VO planar layers with a square lattice crystallize in the CeCrSiC structure with the space group of . Another new compound VSeO which crystallizes in space group is fabricated by topochemical deintercalation of cesium from CsVSeO powder with iodine in tetrahydrofuran(THF). Resistivity measurements show a semiconducting behavior for CsVSeO, while a metallic behavior for CsVSeO, and an insulating feature for VSeO. A charge- or spin-density wave-like anomaly has been observed at 168 K for CsVSeO and 150 K for CsVSeO, respectively. And these anomalies are also confirmed by the magnetic susceptibility measurements. The resistivity in VSeO exhibits an anomalous log(1/) temperature dependence, which is similar to the case in parent phase or very underdoped cuprates indicating the involvement of strong correlation. Magnetic susceptibility measurements show that the magnetic moment per V-site in VSeO is much larger than that of CsVSeO, which again suggests the correlation induced localization effect in the former.
5 pages, 4 figures