Andreev Reflection Enhancement in Semiconductor-Superconductor Structures
arXiv:1802.05276 · doi:10.1103/PhysRevB.97.054512
Abstract
We develop a new theoretical approach for modelling a wide range of semiconductor-superconductor structures with arbitrary potential barriers and a spatially-dependent superconducting order parameter. We demonstrate asymmetry in the conductance spectrum as a result of a Schottky barrier shape. We further show that Andreev reflection process can be significantly enhanced through resonant tunneling with appropriate barrier configuration, which can incorporate the Schottky barrier as a contributing component of the device. Moreover, we show that resonant tunneling can be achieved in superlattice structures as well. These theoretically demonstrated effects along with our modelling approach enable much more efficient Cooper pair injection into semiconductor-superconductor structures, including superconducting optoelectronic devices.
References in corpus (6)
- Evidence for crossed Andreev reflection in superconductor-ferromagnet hybrid structures
- Andreev Reflection in Heavy-Fermion Superconductors and Order Parameter Symmetry in CeCoIn_5
- Accuracy of transfer matrix approaches for solving the effective mass Schrödinger equation
- General framework for transport in spin-orbit-coupled superconducting heterostructures: Nonuniform spin-orbit coupling and spin-orbit-active interfaces
- Light Amplification in Semiconductor-Superconductor Structures
- Photon Bell-State Analysis Based on Semiconductor-Superconductor Structures