Tunable Electronic Structure and Topological Properties of (=Ce, Pr, Gd, Sm, Yb; =Sb, Bi)
arXiv:1802.04554 · doi:10.1038/s42005-018-0074-8
Abstract
We have performed systematic first principles study of the electronic structure and band topology properties of compounds (=Ce, Pr, Gd, Sm, Yb; =Sb, Bi). Assuming the -electrons are well localized in these materials, both hybrid functional and modified Becke-Johnson calculations yield electronic structure in good agreement with experimental observations, while generalized gradient approximation calculations severely overestimate the band inversions. From Ce to Yb, a systematic reduction of band inversion with respect to the increasing atomic number is observed, and for Ce and Yb are [1;000] and [0;000], respectively. In both hybrid functional and modified Becke-Johns calculations, a topologically nontrivial to trivial transition is expected around SmSb for the antimonides and around DyBi for the bismuthides. Such variation is related with lanthanide contraction, but is different from simple pressure effect.
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