Spectroscopic evidence of topological phase transition in 3D Dirac semimetal Cd(AsP)
arXiv:1802.04045 · doi:10.1103/PhysRevB.98.085145
Abstract
We study the low-energy electronic structure of three-dimensional Dirac semimetal, Cd(AsP) [ = 0 and 0.34(3)], by employing the angle-resolved photoemission spectroscopy (ARPES). We observe that the bulk Dirac states in Cd(AsP) are gapped out with an energy of 0.23 eV, contrary to the parent CdAs in which the gapless Dirac states have been observed. Thus, our results confirm the earlier predicted topological phase transition in CdAs with perturbation. We further notice that the critical P substitution concentration, at which the two Dirac points that are spread along the -axis in CdAs form a single Dirac point at , is much lower [x(P) 0.34(3)] than the predicted value of x(P)=0.9. Therefore, our results suggest that the nontrivial band topology of CdAs is remarkably sensitive to the P substitution and can only survive over a narrow substitution range, i.e., 0 x (P) 0.34(3).
3 figures, 5 pages