Evolution of defect signatures at ferroelectric domain walls in Mg-doped LiNbO3

Abstract

The domain structure of uniaxial ferroelectric lithium niobate single crystals is investigated using Raman spectroscopy mapping. The influence of doping with magnesium and poling at room temperature is studied by analysing frequency shifts at domain walls and their variations with dopant concentration and annealing conditions. It is shown that defects are stabilized at domain walls and that changes in the defect structures with Mg concentration can be probed by the shift of Raman modes. We show that the signatures of polar defects in the bulk and at the domain walls differ.

10 pages, 3 figures

References in corpus (1)

• Conduction at domain walls in insulating Pb(Zr${}_{0.2}$Ti${}_{0.8}$)O${}_3$ thin films

Cited by in corpus (3)

• Raman signatures of ferroic domain walls captured by principal component analysis
• New Insights into Refractive Indices and Birefringence of Undoped and MgO-Doped Lithium Niobate Crystals at High Temperatures
• In-situ SHG microscopy investigation of the domain-wall-conductivity enhancement procedure in lithium niobate