On geometric estimates for some problems arising from modeling pull-in voltage in MEMS

Abstract

In this paper for all $p>1$ we prove that the pull-in voltage of the $p$-MEMS (micro-electro mechanical systems) problems on a smooth bounded domain of ${\mathbb{R}}^d,d\ge 1,$ is minimized by symmetrizing the domain and the permittivity profile. The proofs rely on some suitable version of Talenti's comparison principle. We also demonstrate our method to the multidimensional MEMS type problems on the whole space ${\mathbb{R}}^d,d\ge 3,$ and the Dirichlet boundary value problems of second order uniformly elliptic differential operators.

revised version with corrected arguments; to replace the previous version

References in corpus (1)

• Isoperimetric inequalities for the logarithmic potential operator