Electrical tuning of spin splitting in Bi-doped ZnO nanowires

Abstract

The effect of applying an external electric field on doping-induced spin-orbit splitting of the lowest conduction-band states in a bismuth-doped zinc oxide nanowire is studied by performing electronic structure calculations within the framework of density functional theory. It is demonstrated that spin splitting in Bi-doped ZnO nanowires could be tuned and enhanced electrically via control of the strength and direction of the applied electric field, thanks to the nonuniform and anisotropic response of the ZnO:Bi nanowire to external electric fields. The results reported here indicate that a single ZnO nanowire doped with a low concentration of Bi could function as a spintronic device, operation of which is controlled by applied lateral electric fields.

References in corpus (5)

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• Orbital mechanisms of electron spin manipulation by an electric field
• Strong tuning of Rashba spin orbit interaction in single InAs nanowires
• Crystal and electronic structure of BiTeI, AuTeI, and PdTeI compounds: A dispersion-corrected density-functional study
• Doping-induced spin-orbit splitting in Bi-doped ZnO nanowires