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cond-mat.mes-hallJan 4, 2018
12
citations (OpenAlex)
authors
  • C. J. Dorow
  • J. R. Leonard
  • M. M. Fogler
  • L. V. Butov
  • K. W. West
  • L. N. Pfeiffer
institutions
  • Princeton University
  • University of California San Diego
arXiv abstractPDF
paper

Split-gate device for indirect excitons

arXiv:1801.01553 · doi:10.1063/1.5021488

Abstract

We present a concept and experimental proof of principle for split-gate devices for indirect excitons (IXs). The split-gate forms a narrow channel, a point contact, for IX current. Control of IX flow through the split-gate with both gate voltage and excitation power is demonstrated.

References in corpus (4)

  • Drift mobility of long-living excitons in coupled GaAs quantum wells
  • Radiative lifetimes of dipolar excitons in double quantum-wells
  • Indirect excitons in a potential energy landscape created by a perforated electrode
  • Exact two-body quantum dynamics of an electron-hole pair in semiconductor coupled quantum wells: a time-dependent approach

Cited by in corpus (5)

  • Voltage-controlled long-range propagation of indirect excitons in van der Waals heterostructure
  • High-mobility indirect excitons in wide single quantum well
  • Optical signature of quantum coherence in fully dark exciton condensates
  • Exciton gas transport through nano-constrictions
  • Quantum control of exciton motion in electric field
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