Dominant role of the shear strain induced admixture in spin-flip processes in self-assembled quantum dots
arXiv:1712.03648 · doi:10.1103/PhysRevB.97.245313
Abstract
We study theoretically the spin-flip relaxation processes for a single electron in a self-assembled InAs/GaAs quantum dot, using an 8-band kp theory in the envelope function approximation. We show that the dominating channel of spin relaxation is spin admixture induced by symmetry-breaking shear strain, which can be mapped onto two effective spin-phonon terms in a conduction band (effective mass) Hamiltonian that have a similar structure and interfere constructively. Unlike the Dresselhaus coupling that dominates spin relaxation in larger, unstrained dots, the shear strain contribution cannot be modeled by a unique standard term in the Hamiltonian but rather relies on the actual strain distribution in the quantum dot.
References in corpus (27)
- Quantum Computation with Quantum Dots
- Driven coherent oscillations of a single electron spin in a quantum dot
- Coherent control of a single electron spin with electric fields
- Spin relaxation in semiconductor quantum dots
- Spin-flip transitions between Zeeman sublevels in semiconductor quantum dots
- Comparison of two methods for describing the strain profiles in quantum dots
- Quantum Dot as Spin Filter and Spin Memory
- Stimulated and spontaneous optical generation of electron spin coherence in charged GaAs quantum dots
- Coherent Population Trapping of an Electron Spin in a Single Negatively Charged Quantum Dot
- Optical control of spin coherence in singly charged (In,Ga)As/GaAs quantum dots
- Fast optical preparation, control and read-out of single quantum dot spin
- Coherent optical control of the spin of a single hole in a quantum dot
- Isotope sensitive measurement of the hole-nuclear spin interaction in quantum dots
- Spin relaxations in semiconductor quantum dots
- Direct Measurement of Quantum Dot Spin Dynamics using Time-Resolved Resonance Fluorescence
- Optical detection of single electron spin resonance in a quantum dot
- Origin of non-linear piezoelectricity in III-V semiconductors: Internal strain and bond ionicity from hybrid-functional density functional theory
- Long-lived electron spin coherence in CdSe/ZnSSe self-assembled quantum dots
- Semiconductor quantum ring as a solid-state spin qubit
- Longitudinal spin-relaxation of donor-bound electrons in direct bandgap semiconductors
- Probing spin relaxation in an individual InGaAs quantum dot using a single electron optical spin memory device
- Electron-phonon induced spin relaxation in InAs quantum dots
- Exciton spin relaxation in resonantly excited CdTe/ZnTe self-assembled quantum dots
- Phonon modulation of the spin-orbit interaction as a spin relaxation mechanism in quantum dots
- Limited accuracy of conduction band effective mass equations for semiconductor quantum dots
- Dissipative dynamics of spins in quantum dots
- Atomistic theory of spin relaxation in self-assembled InGaAs/GaAs quantum dots at zero magnetic field
Cited by in corpus (13)
- Hyperfine interaction for holes in quantum dots: k.p model
- Impact of MBE-grown (In,Ga)As/GaAs metamorphic buffers on excitonic and optical properties of single quantum dots with single-photon emission tuned to the telecom range
- Ferroelastic switching with van der Waals direction transformation in layered PdSe2 driven by uniaxial and shear strain
- Hole spin-flip transitions in a self-assembled quantum dot
- Controllable electron spin dephasing due to phonon state distinguishability in a coupled quantum dot system
- Tunneling-related electron spin relaxation in self-assembled quantum-dot molecules
- The importance of second order deformation potentials in modeling of InAs/GaAs nanostructures
- Strongly temperature-dependent recombination kinetics of a negatively charged exciton in asymmetric quantum dots at 1.55 μm
- Spin-orbit coupling and spin relaxation of hole states in [001]- and [111]-orientedquantum dots of various geometry
- Phonon-assisted carrier tunneling in coupled quantum dot systems with hyperfine-induced spin flip
- Quantum dots as optimized chiral emitters for photonic integrated circuits
- Spin-orbit-induced hole spin relaxation in a quantum dot molecule: the effect of - coupling
- Distributed Bragg reflector-mediated excitation of InAs/InP quantum dots emitting in the telecom C-band