Double Fe-impurity charge state in the topological insulator Bi${}_2$Se${}_3$

Abstract

The influence of individual impurities of Fe on the electronic properties of topological insulator Bi${}_2$Se${}_3$ is studied by Scanning Tunneling Microscopy. The microscope tip is used in order to remotely charge/discharge Fe impurities. The charging process is shown to depend on the impurity location in the crystallographic unit cell, on the presence of other Fe impurities in the close vicinity, as well as on the overall doping level of the crystal. We present a qualitative explanation of the observed phenomena in terms of tip-induced local band bending. Our observations evidence that the specific impurity neighborhood and the position of the Fermi energy with respect to the Dirac point and bulk bands have both to be taken into account when considering the electron scattering on the disorder in topological insulators.

arXiv comment10 pages, accepted for publication in Applied Physics Letters, minor bugs were corrected

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Cited by in corpus (2)

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• Evidence for atomic-scale vibron-mediated electron bunching