n-type Rashba Spin Splitting in a Bilayer Inorganic Halide Perovskite with External Electric Field

Abstract

In this letter, we investigated the Rashba effect of the CsPbBr${}_3$ bilayers under the external electric field (EEF), with the first-principles calculations. For the PbBr${}_2$ terminated bilayer, we found that only electrons experience the Rashba splitting under EEF, while holes do not. Such n-type Rashba effect can be ascribed to the surface relaxation effect that reverse the position of the top valence bands. The n-type Rashba parameter can be tuned monotonically to the maximum of 0.88 eV $\mathring{A}$ at EEF of 1.35 V/nm at which the sequence of top valence bands recover to the bulk style. During this process the p-type spins will not survive in this 2D CsPbBr${}_3$, that indeed hints a new way for making advanced functional spintronic devices.

4 pages, 5 figures

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• Measurement of Rashba and Dresselhaus spin-orbit magnetic fields
• Energy-gap modulation of boron nitride nanoribbons by transverse electric fields: First-principles calculations
• Rashba type spin-orbit splitting of quantum well states in ultrathin Pb films