Anisotropic magnetic properties of the ferromagnetic semiconductor CrSbSe${}_3$

Abstract

Single crystals of CrSbSe${}_3$, a structurally pseudo-one-dimensional ferromagnetic semiconductor, were grown using a high-temperature solution growth technique and were characterized by x-ray diffraction, anisotropic, temperature- and field-dependent magnetization, temperature-dependent resistivity and optical absorption measurements. A band gap of 0.7 eV was determined from both resistivity and optical measurements. At high temperatures, CrSbSe${}_3$ is paramagnetic and isotropic with a Curie-Weiss temperature of $\sim$145 K and an effective moment of $\sim$4.1 ${\mu }_B$/Cr. A ferromagnetic transition occurs at $T_c$ = 71 K. The $a$-axis, perpendicular to the chains in the structure, is the magnetic easy axis, while the chain axis direction, along $b$, is the hard axis. Magnetic isotherms measured around $T_c$ do not follow the behavior predicted by simple mean field critical exponents for a second order phase transition. A tentative set of critical exponents is estimated based on a modified Arrott plot analysis, giving $\beta \sim$0.25, $\gamma \sim$1.38 and $\delta \sim$6.6.

arXiv comment6 pages, 7 figures

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• Bond-Length-Driven Magnetic Transition in Quasi-One-Dimensional CrSb$X_3$ ($X$=S, Se)