Kondo-Resonance Mediated Metal-Insulator Transition in GaAs Embedded with Erbium Arsenide Quantum Dots

Abstract

We report anomalous critical transport behavior in a GaAs structure containing a dense array of ErAs quantum dots. The structure displays a voltage (electric field)-controlled insulator-to-metal transition and strong hysteresis in the Kondo-like current-vs-temperature characteristic, with critical temperatures as high as 50 K. We attribute this behavior to a strong distributed Kondo resonance between the quantum dots after the Coulomb blockade of the array is lifted. This is consistent with a high sensitivity of the phase transition to a small external magnetic field that we have observed in the Voigt configuration, and a phenomenological model based on the RKKY interaction within a quantum dot and the cooperative Kondo-resonance amongst quantum dots.

arXiv comment15 pages, 6 figures

References in corpus (8)

• Kondo Physics in a Single Electron Transistor
• A Tunable Kondo Effect in Quantum Dots
• Observation of the two-channel Kondo effect
• Anomalous Kondo-effect in Quantum Dot at non-zero bias
• Multiple Cotunneling in Large Quantum Dot Arrays
• Quantum phase transition in a two-channel-Kondo quantum dot device
• Kondo effect in triple quantum dots
• Local Density of States and Interface Effects in Semimetallic ErAs Nanoparticles Embedded in GaAs