GaAs droplet quantum dots with nanometer-thin capping layer for plasmonic applications

Abstract

We report on the growth and optical characterisation of droplet GaAs quantum dots with extremely-thin (11 nm) capping layers. To achieve such result, an internal thermal heating step is introduced during the growth and its role in the morphological properties of the quantum dots obtained is investigated via scanning electron and atomic force microscopy. Photoluminescence measurements at cryogenic temperatures show optically stable, sharp and bright emission from single quantum dots, at near-infrared wavelengths. Given the quality of their optical properties and the proximity to the surface, such emitters are ideal candidates for the investigation of near field effects, like the coupling to plasmonic modes, in order to strongly control the directionality of the emission and/or the spontaneous emission rate, crucial parameters for quantum photonic applications.

arXiv comment1 pages, 3 figures

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Cited by in corpus (3)

• Broadband, efficient extraction of quantum light by a photonic device comprised of a metallic nano-ring and a gold back reflector
• Thermal release tape-assisted semiconductor membrane transfer process for hybrid photonic devices embedding quantum emitters
• Combined metallic nano-rings and solid-immersion lenses for bright emission from single InAs/GaAs quantum dots