High-order harmonic generation of doped semiconductor

Abstract

We investigate the high-order harmonic generation (HHG) in doped semiconductors. The HHG is simulated with the single-electron time-dependent Schrödinger equation (TDSE). The results show that the high-order harmonics in the second plateau generated from the doped semiconductors is about 1 to 3 orders of magnitude higher than those from the undoped semiconductor. The results are explained based on the analysis of the energy band structure and the time-dependent population imaging. Our work indicates that doping can effectively control the HHG in semiconductor.

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Cited by in corpus (14)

• Introduction to theory of high-harmonic generation in solids: tutorial
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• High-Harmonic generation from spin-polarised defects in solids
• Enhanced high-order harmonic generation in donor-doped band-gap materials
• Influence of vacancy defects in solid high-order harmonic generation
• Enhanced high-harmonic generation from chromium-doped magnesium oxide
• High-harmonic generation in metallic titanium nitride
• High harmonic generation tomography of impurities in solids: conceptual analysis
• Expanded view of electron-hole recollisions in solid-state high-order harmonic generation: Full-Brillouin-zone tunneling and imperfect recollisions
• Disorder Effects on the Origin of High-Order Harmonic Generation in Solids
• Strong-field-driven dynamics and high-harmonic generation in interacting 1D systems
• Factorization of high-harmonic generation yields in impurity-doped materials
• Tuning the electronic band structure of metal surfaces for enhancing high-order harmonic generation
• Laser field strength dependence of solid high-harmonic generation from doped systems