Illumination-induced nonequilibrium charge states in self-assembled quantum dots
arXiv:1710.07545 · doi:10.1103/PhysRevB.97.045416
Abstract
We report on capacitance-voltage spectroscopy of self-assembled InAs quantum dots under constant illumination. Besides the electronic and excitonic charging peaks in the spectrum reported earlier, we find additional resonances associated with nonequilibrium state tunneling unseen in C(V) measurements before. We derive a master-equation based model to assign the corresponding quantum state tunneling to the observed peaks. C(V) spectroscopy in a magnetic field is used to verify the model-assigned nonequilibrium peaks. The model is able to quantitatively address various experimental findings in C(V) spectroscopy of quantum dots such as the frequency and illumination dependent peak height, a thermal shift of the tunneling resonances and the occurrence of the additional nonequilibrium peaks.
References in corpus (6)
- Review: Semiconductor Quantum Light Sources
- Transform-limited single photons from a single quantum dot
- A dark-field microscope for background-free detection of resonance fluorescence from single semiconductor quantum dots operating in a set-and-forget mode
- A frequency-stabilized source of single photons from a solid-state qubit
- Asymmetry of charge relaxation times in quantum dots: The influence of degeneracy
- Thermal shift of the resonance between an electron gas and quantum dots: What is the origin?