Theoretical study on magnetic tunneling junctions with semiconductor barriers CuInSe${}_2$ and CuGaSe${}_2$ including a detailed analysis of band-resolved transmittances

Abstract

We study spin-dependent transport properties in magnetic tunneling junctions (MTJs) with semiconductor barriers, Fe/CuInSe${}_2$/Fe(001) and Fe/CuGaSe${}_2$/Fe(001). By analyzing their transmittances at zero bias voltage on the basis of the first-principles calculations, we find that spin-dependent coherent tunneling transport of ${\Delta }_1$ wave functions yields a relatively high magnetoresistance (MR) ratio in both the MTJs. We carry out a detailed analysis of the band-resolved transmittances in both the MTJs and find an absence of the selective transmission of ${\Delta }_1$ wave functions in some energy regions a few eV away from the Fermi level due to small band gaps in CuInSe${}_2$ and CuGaSe${}_2$.

4 pages, 1 figure, 1 table

References in corpus (3)

• A first-principles study of tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) magnetic tunnel junctions
• Giant interfacial perpendicular magnetic anisotropy in Fe/CuIn${}_{1-x}$Ga${}_x$Se${}_2$ beyond Fe/MgO
• First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_2$ and CuGaSe${}_2$ barriers