The tunneling potential for field emission from nanotips
arXiv:1710.03992 · doi:10.1063/1.5009059
Abstract
In the quasi-planar approximation of field emission, the potential energy due to an external electrostatic field is expressed as where is the perpendicular distance from the emission site and is the local field enhancement factor on the surface of the emitter. We show that for curved emitter tips, the current density can be accurately computed if terms involving and are incorporated in the potential where is the second (smaller) principle radius of curvature. The result is established analytically for the hemiellipsoid and hyperboloid emitters and it is found that for sharply curved emitters, the expansion coefficients are equal and coincide with that of a sphere. The expansion seems to be applicable to generic emitters as demonstrated numerically for an emitter with a conical base and quadratic tip. The correction terms in the potential are adequate for nm for local field strengths of V/nm or higher. The result can also be used for nano-tipped emitter arrays or even a randomly placed bunch of sharp emitters.
arXiv comment9 pages, 6 figures
References in corpus (5)
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Cited by in corpus (8)
- Shielding effects in random large area field emitters, the field enhancement factor distribution and current calculation
- Field-emission from parabolic tips: current distributions, the net current and effective emission area
- Curvature correction to the field emission current
- Higher order curvature corrections to the field emission current density
- A hybrid approach to modelling large area field emitters
- General form of the tunnelling barrier for nanometrically sharp electron emitters
- Approximate universality in the tunneling potential for curved field emitters -- a line charge model approach
- Fast and accurate determination of the curvature-corrected field emission current