Giant self-induced transparency of intense few-cycle terahertz pulses in n-doped silicon

Abstract

The results of high-field terahertz transmission experiments on n-doped silicon (carrier concentration of $8.7\times 10^{16}$ cm${}^{-3}$) are presented. We use terahertz pulses with electric field strengths up to 3.1 MV cm${}^{-1}$ and a pulse duration of 700 fs. Huge transmittance enhancement of $\sim$90 times is observed with increasing of the terahertz electric field strengths within the range of 1.5--3.1 MV cm${}^{-1}$.

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Cited by in corpus (2)

• Nonlinear Transfer of Intense Few Cycle Terahertz Pulse Through Opaque n-doped Si
• High order Brunel harmonics and supercontinuum formed by a weak optical pump in presence of a strong terahertz field