Band structure of Cd${}_3$As${}_2$ from Shubnikov - de Haas and de Haas - van Alphen effects

Abstract

Experimental values of SdH and dHvA periods and cyclotron effective masses found by Rosenman and Doi et al. have been compared with the theoretical predictions derived in this work for a tetragonal narrow gap semiconductor. By the least square fit method the values of band parameters were obtained. It has been established that Cd${}_3$As${}_2$ has inverted band structure resembling HgTe under tensile stress.

The following paper on the band structure of Cd${}_3$As${}_2$ was published by Jan Bodnar in the Proceedings of the 3rd International Conference on the Physics of Narrow Gap Semiconductors (Warszawa 1977), p. 311. A few months after the conference Jan died suddenly of a heart attack at the age of 27. The paper appears without changes. Wlodek Zawadzki, [[email protected]]