Predicting ground-state configurations and electronic properties of the thermoelectric clathrates BaAlSi and SrAlSi
arXiv:1708.08126 · doi:10.1021/acs.chemmater.6b05027
Abstract
The structural and electronic properties of the clathrate compounds BaAlSi and SrAlSi are studied from first principles, considering an Al content between 6 and 16. Due to the large number of possible substitutional configurations we make use of a special iterative cluster-expansion approach, to predict ground states and quasi-degenerate structures in a highly efficient way. These are found from a simulated annealing technique where millions of configurations are sampled. For both compounds, we find a linear increase of the lattice constant with the number of Al substituents, confirming experimental observations for BaAlSi. Also the calculated bond distances between high-symmetry sites agree well with experiment for the full compositional range. For being below 16, all configurations are metallic for both materials. At the charge-balanced composition (), the substitutional ordering leads to a metal-semiconductor transition, and the ground states of BaAlSi and SrAlSi exhibit indirect Kohn-Sham band gaps of 0.36 and 0.30 eV, respectively, while configurations higher in energy are metals. The finding of semiconducting behavior is a promising result in view of exploiting these materials in thermoelectric applications.
9 figures
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