Magneto-transport and Electronic Structures of BaZnBi
arXiv:1708.06531 · doi:10.1088/1367-2630/aa95e7
Abstract
We report the magneto-transport properties and electronic structures of BaZnBi. BaZnBi is a quasi-two-dimensional (2D) material with metallic behavior. The transverse magnetoresistance (MR) depends on magnetic field linearly and exhibits Shubnikov-de Haas (SdH) oscillation at low temperature and high field. The observed linear MR may originate from the disorder in samples or the edge conductivity in compensated two-component systems. The first-principles calculations reveal the absence of stable gapless Dirac fermion. Combining with the trivial Berry phase extracted from SdH oscillation, BaZnBi is suggested to be a topologically trivial semimetal. Nearly compensated electron-like Fermi surfaces (FSs) and hole-like FSs coexist in BaZnBi.
6 pages, 6 figures
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