Mobility Transition at Grain Boundaries in Two-Step Sintered 8 mol% Yttria Stabilized Zirconia

Abstract

Stagnation of grain growth is often attributed to impurity segregation. Yttria-stabilized cubic zirconia does not evidence any segregation-induced slowdown, as its grain growth obeys the parabolic law when the grain size increases by more than one order of magnitude. However, lowering the temperature below 1300 oC triggers an abrupt slowdown, constraining the average grains to grow by less than 0.5 $\mu$m in 1000 h despite a relatively large driving force imparted in the fine grains of ~0.5 $\mu$m. Yet isolated pockets of abnormally large grains, along with pockets of abnormally small grains, emerge in the same latter sample. Such microstructure bifurcation has never been observed before, and can only be explained by an inhomogeneous distribution of immobile four-grain junctions. The implications of these findings for two-step sintering are discussed.

References in corpus (4)

• Electrical and Hydrogen Reduction Enhances Kinetics in Doped Zirconia and Ceria: II. Mapping Electrode Polarization and Vacancy Condensation in YSZ
• A Computational Study of Yttria-Stabilized Zirconia: II. Cation Diffusion
• A Computational Study of Yttria-Stabilized Zirconia: I. Using Crystal Chemistry to Search for the Ground State on a Glassy Energy Landscape
• Grain Growth with Size-Dependent or Statistically Distributed Mobility

Cited by in corpus (3)

• Ultra-uniform Nanocrystalline Materials via Two-Step Sintering
• Oxygen Potential Transition in Mixed Conducting Oxide Electrolyte
• Grain Growth with Size-Dependent or Statistically Distributed Mobility