High-temperature quantum oscillations of the Hall resistance in bulk Bi${}_2$Se${}_3$

Abstract

Helically spin-polarized Dirac fermions (HSDF) in protected topological surface states (TSS) are of high interest as a new state of quantum matter. In three-dimensional (3D) materials with TSS, electronic bulk states often mask the transport properties of HSDF. Recently, the high-field Hall resistance and low-field magnetoresistance indicate that the TSS may coexist with a layered two-dimensional electronic system (2DES). Here, we demonstrate quantum oscillations of the Hall resistance at temperatures up to 50 K in bulk Bi${}_2$Se${}_3$ with a high electron density $n$ of about $2\cdot 10^{19}$ cm${}^{-3}$. From the angular and temperature dependence of the Hall resistance and the Shubnikov-de Haas oscillations we identify 3D and 2D contributions to transport. Angular resolved photoemission spectroscopy proves the existence of TSS. We present a model for Bi${}_2$Se${}_3$ and suggest that the coexistence of TSS and 2D layered transport stabilizes the quantum oscillations of the Hall resistance.