Chiral Topological Excitons in a Chern Band Insulator

Abstract

A family of semiconductors called as Chern band insulator are shown to host exciton bands with non-zero topological Chern integers and chiral exciton edge modes. Using a prototypical two-band Chern insulator model, we calculate a cross-correlation function to obtain the exciton bands and their Chern integers. The lowest exciton band acquires Chern integers such as $\pm 1$ and $\pm 2$ in electronic Chern insulator phase. The non-trivial topology can be experimentally observed both by non-local optoelectronic response of exciton edge modes and by a phase shift in the cross-correlation response due to the bulk mode. Our result suggests that magnetically doped HgTe, InAs/GaSb quantum wells and ${\text{(Bi,Sb)}}_2{\text{Te}}_3$ thin film are promising candidates for a platform of topological excitonics.

arXiv comment5+ pages, 3 figures with supplemental materials

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Cited by in corpus (9)

• Exciton band topology in spontaneous quantum anomalous Hall insulators: applications to twisted bilayer graphene
• Topological excitonic corner states and nodal phase in bilayer quantum spin Hall insulators
• Exciton topology and condensation in a model quantum spin Hall insulator
• Observation of room temperature excitons in an atomically thin topological insulator
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• Interacting topological mirror excitonic insulator in one dimension
• Textured Exciton Insulators
• Floquet-Weyl semimetals generated by an optically resonant interband-transition
• Optical selection rules of topological excitons in flat bands