Chiral Topological Excitons in a Chern Band Insulator
arXiv:1707.03136 · doi:10.1103/PhysRevB.96.161101
Abstract
A family of semiconductors called as Chern band insulator are shown to host exciton bands with non-zero topological Chern integers and chiral exciton edge modes. Using a prototypical two-band Chern insulator model, we calculate a cross-correlation function to obtain the exciton bands and their Chern integers. The lowest exciton band acquires Chern integers such as and in electronic Chern insulator phase. The non-trivial topology can be experimentally observed both by non-local optoelectronic response of exciton edge modes and by a phase shift in the cross-correlation response due to the bulk mode. Our result suggests that magnetically doped HgTe, InAs/GaSb quantum wells and thin film are promising candidates for a platform of topological excitonics.
5+ pages, 3 figures with supplemental materials
References in corpus (16)
- Valley polarization in MoS2 monolayers by optical pumping
- Quantized Anomalous Hall Effect in Magnetic Topological Insulators
- Quasiparticle band structures and optical properties of strained monolayer MoS2 and WS2
- Quantum Anomalous Hall Effect in HgMnTe Quantum Wells
- Proximity-induced ferromagnetism in graphene revealed by anomalous Hall effect
- Exciton binding energies in carbon nanotubes from two-photon photoluminescence
- Exciton band structure of monolayer MoS2
- Topological Polaritons
- Polariton Topological Insulator
- Exciton condensation and charge fractionalization in a topological insulator film
- Topological Polaritons and Excitons in Garden Variety Systems
- Phase reciprocity of spin-wave excitation by a microstrip antenna
- Collective modes in two- and three-dimensional electron systems with Rashba spin-orbit coupling
- Gradient expansion approach to multiple-band Fermi liquids
- Artificial electric field in Fermi Liquids
- Chiral topological excitons in the monolayer transition metal dichalcogenides