paper

Indications of spin polarized transport in BaFeMoO thin films

arXiv:1707.01208

Abstract

We have investigated the magnetic and magnetotransport properties of BaFeMoO thin films produced by pulsed laser deposition from optimized bulk material. The films are comprised of grains of crystalline BaFeMoO with a disordered grain boundary region that lowers the net saturation magnetization of the film and prevents full magnetic alignment below a Curie temperature 305 K. Magnetotransport measurements point to the BaFeMoO grains retaining the high spin polarization of a half-metal up to , while the grain boundaries greatly reduce the spin polarization of the intergrain electrical current due to spin-flip scattering. Our results show that a strong spin polarization of the electronic charge carriers is present even in BaFeMoO films that do not show the ideal bulk magnetic character.

10 pages (single column), 6 figures