Real-space study of the optical absorption in alternative phases of silicon
arXiv:1706.07382 · doi:10.1103/PhysRevMaterials.1.075408
Abstract
We introduce a real-space approach to understand the relationship between optical absorption and crystal structure. We apply this approach to alternative phases of silicon, with a focus on the Si crystal phase as a case study. We find that about 83% of the changes in the calculated low-energy absorption in Si as compared to Si in the diamond structure can be attributed to reducing the differences between the on-site energies of the bonding and anti-bonding orbitals as well as increasing the hopping integrals for specific Si-Si bonds.
8 pages, 8 figures
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