An efficient and reliable growth method for epitaxial complex oxide films by molecular beam epitaxy

Abstract

Transition metal oxide heterostructures and interfaces host a variety of exciting quantum phases and can be grown with atomic-scale precision by utilising the intensity oscillations of $in$ $situ$ reflection high-energy electron diffraction (RHEED). However, establishing a stable oscillation pattern in the growth calibration of complex oxides films is very challenging and time consuming. Here, we develop a substantially more efficient and reliable growth calibration method for complex oxide films using molecular beam epitaxy.

4 pages, 3 figures

References in corpus (3)

• Atomically precise interfaces from non-stoichiometric deposition
• Fabricating Superconducting Interfaces between Artificially-Grown LaAlO${}_3$ and SrTiO${}_3$ Thin Films
• Complex oxide growth using simultaneous in situ RHEED and x-ray reflectivity: When is one layer complete?

Cited by in corpus (1)

• Impact of Cation Stoichiometry on the Crystalline Structure and Superconductivity in Nickelates