Distinct Effects of Cr Bulk Doping and Surface Deposition on the Chemical Environment and Electronic Structure of the Topological Insulator Bi2Se3
arXiv:1706.03274 · doi:10.1016/j.apsusc.2017.02.160
Abstract
In this report, it is shown that Cr doped into the bulk and Cr deposited on the surface of Bi2Se3 films produced by molecular beam epitaxy (MBE) have strikingly different effects on both the electronic structure and chemical environment.
References in corpus (6)
- Quantum Spin Hall Insulator State in HgTe Quantum Wells
- Topological Field Theory of Time-Reversal Invariant Insulators
- Sources of experimental errors in the observation of nanoscale magnetism
- Chemical potential dependent gap-opening at the Dirac surface states of Bi2Se3 induced by aggregated substitutional Cr atoms
- Filling of magnetic-impurity-induced gap in topological insulators by potential scattering
- Observation of Distinct Bulk and Surface Chemical Environments in a Topological Insulator under Magnetic doping