Quantum-confined Stark effect in band-inverted junctions

Abstract

Topological phases of matter are often characterized by interface states, which were already known to occur at the boundary of a band-inverted junction in semiconductor heterostructures. In IV-VI compounds such interface states are properly described by a two-band model, predicting the appearance of a Dirac cone in single junctions. We study the quantum-confined Stark effect of interface states due to an electric field perpendicular to a band-inverted junction. We find a closed expression to obtain the interface dispersion relation at any field strength and show that the Dirac cone widens under an applied bias. Thus, the Fermi velocity can be substantially lowered even at moderate fields, paving the way for tunable band-engineered devices based on band-inverted junctions.

References in corpus (10)

• Topological Crystalline Insulators
• Observation of Van Hove singularities in twisted graphene layers
• Dirac cones reshaped by interaction effects in suspended graphene
• Localization of Dirac electrons by Moire patterns in graphene bilayers
• Fermi velocity engineering in graphene by substrate modification
• Quasiparticle Dynamics in Reshaped Helical Dirac Cone of Topological Insulators
• Tuning the Fermi velocity in Dirac materials with an electric field
• Relativistic particle in a three-dimensional box
• Site-Specific Contributions to the Band Inversion in a Topological Crystalline Insulator
• Green Function Approach to Interface States in Band Inverted Junctions

Cited by in corpus (7)

• Nanowires: A route to efficient thermoelectric devices
• Floquet engineering of Dirac cones on the surface of a topological insulator
• Quantized electron transport through graphene nanoconstrictions
• Electric field manipulation of surface states in topological semimetals
• Effect of the external fields in high Chern number quantum anomalous Hall insulators
• Topologically protected states in $\delta$-doped junctions with band inversion
• Robust midgap states in band-inverted junctions under electric and magnetic fields