A new relation between the hot electron power loss and acoustic phonon limited mobility in Bloch-Grüneisen regime

Abstract

Expressions for the electron power loss F(T) and mobility μ_p due to acoustic phonon scattering are given in the Bloch-Grüneisen (BG) regime for three- and two- dimensional electron gas in semiconductors and Dirac-fermions. We obtain a simple relation F(T) μ_p = ηev_s^2, where η (~1) is a constant, e is the electron charge and v_s is acoustic phonon velocity. It is found to be independent of temperature and electron concentration. This relation is applied to GaAs heterojucntions and graphene, to obtain μ_p from the measured F(T). We propose that, using this relation, the measurements of F(T), in BG regime, which depends exclusively upon acoustic phonons coupling, could serve as a tool to determine the low temperature μ_p, which is otherwise difficult to measure due to the contributions from disorders

arXiv comment4 pages and 1 table