Superconductor to weak-insulator transitions in disordered Tantalum Nitride films

Abstract

We study the two-dimensional superconductor-insulator transition (SIT) in thin films of tantalum nitride. At zero magnetic field, films can be disorder-tuned across the SIT by adjusting thickness and film stoichiometry; insulating films exhibit classical hopping transport. Superconducting films exhibit a magnetic field-tuned SIT, whose insulating ground state at high field appears to be a quantum-corrected metal. Scaling behavior at the field-tuned SIT shows classical percolation critical exponents $z\nu \approx$ 1.3, with a corresponding critical field $H_c\ll H_{c2}$. The Hall effect shows a crossing point near $H_c$, but with a non-universal critical value ${\rho }_{xy}^c$ comparable to the normal state Hall resistivity. We propose that high-carrier density metals will always exhibit this pattern of behavior at the boundary between superconducting and (trivially) insulating ground states.

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References in corpus (10)

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• Granular-composite-like electrical transport properties of polycrystalline cubic TaN${}_x$ thin films prepared by rf sputtering method
• Quantum critical scaling of the conductivity tensor at the metal-insulator transition in Nb${}_{1-x}$Ti${}_x$N
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