Drastic change of the Fermi surface across the metamagnetic transition in CeRhSi
arXiv:1704.02139 · doi:10.1103/PhysRevB.95.161107
Abstract
We report high field de Haas-van Alphen (dHvA) effect measurements in CeRhSi both below and above the first-order 26 T metamagnetic transition from an antiferromagnetic to a polarized paramagnetic state. The dHvA frequencies observed above the transition are much higher than those observed below, implying a drastic change of the Fermi-surface size. The dHvA frequencies above the transition and their angular dependence are in good agreement with band-structure calculations for LaRhSi, which correspond to CeRhSi with localized electrons. Given that the electrons are also localized at low fields in CeRhSi, the Fermi-surface reconstruction is due to the suppression of antiferromagnetism and the restoration of the crystallographic Brillouin zone rather than the delocalization of the electrons. This example suggests that the intuitive notation of "small" and "large" Fermi surfaces commonly used for localized and itinerant electrons, respectively, requires careful consideration, taking into account the modification of the Brillouin zone in the antiferromagnetic state, when interpreting experimental results.
arXiv commentaccepted for publication in Phys. Rev. B Rapid. Comm
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