Spin-split bands cause the indirect band gap of (CHNH)PbI: Experimental evidence from circular photogalvanic effect
arXiv:1703.08740 · doi:10.1073/pnas.1805422115
Abstract
Long carrier lifetimes and diffusion lengths form the basis for the successful application of the organic-inorganic perovskite (CHNH)PbI in solar cells and lasers. The mechanism behind the long carrier lifetimes is still not completely understood. Spin-split bands and a resulting indirect band gap have been proposed by theory. Using near band-gap left-handed and right-handed circularly polarized light we induce photocurrents of opposite directions in a single-crystal (CHNH)PbI device at low temperature (). The phenomenom is known as the circular photogalvanic effect and gives direct evidence for phototransport in spin-split bands. Simultaneous photoluminecence measurements show that the onset of the photocurrent is below the optical band gap. The results prove that an indirect band gap exists in (CHNH)PbI with broken inversion symmetry as a result of spin-splittings in the band structure. This information is essential for understanding the photophysical properties of organic-inorganic perovskites and finding lead-free alternatives. Furthermore, the optically driven spin currents in (CHNH)PbI make it a candidate material for spintronics applications.
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