Lifshitz transition mediated electronic transport anomaly in bulk ZrTe5

Abstract

Zirconium pentatelluride ZrTe${}_5$, a fascinating topological material platform, hosts exotic chiral fermions in its highly anisotropic three-dimensional Dirac band and holds great promise advancing the next-generation information technology. However, the origin underlying its anomalous resistivity peak has been under debate for decades. Here we provide transport evidence substantiating the anomaly to be a direct manifestation of a Lifshitz transition in the Dirac band with an ultrahigh carrier mobility exceeding 3$\times$10${}^5$ cm${}^2$ V${}^{-1}$ s${}^{-1}$. We demonstrate that the Lifshitz transition is readily controllable by means of carrier doping, which sets the anomaly peak temperature $T_p$. $T_p$ is found to scale approximately as $n_H^{0.27}$, where the Hall carrier concentration $n_H$ is linked with the Fermi level by ${\epsilon }_F$ $\propto$ $n_H^{1/3}$ in a linearly dispersed Dirac band. This relation indicates $T_p$ monotonically increases with ${\epsilon }_F$, which serves as an effective knob for fine tuning transport properties in pentatelluride-based Dirac semimetals.

References in corpus (4)

• Weyl semimetal phase in non-centrosymmetric transition metal monophosphides
• Dirac materials
• Chiral Anomaly and Diffusive Magnetotransport in Weyl Metals
• Inducing Lifshitz transition by extrinsic doping of surface bands in topological crystalline insulator Pb${}_{1-x}$Sn${}_x$Se

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• Unveiling Symmetry Instability induced by Topological Phase Transitions
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