Transport in Ferromagnet/Superconductor spin valves

Abstract

We consider charge transport properties in realistic, fabricable, Ferromagnet/Superconductor spin valves having a layered structure $F_1/N/F_2/S$, where $F_1$ and $F_2$ denote the ferromagnets, $S$ the superconductor, and $N$ the normal metal spacer usually inserted in actual devices. Our calculation is fully self-consistent, as required to ensure that conservation laws are satisfied. We include the effects of scattering at all the interfaces. We obtain results for the device conductance $G$, as a function of bias voltage, for all values of the angle $\varphi$ between the magnetizations of the $F_1$ and $F_2$ layers and a range of realistic values for the material and geometrical parameters in the sample. We discuss, in the context of our results for $G$, the relative influence of all parameters on the spin valve properties. We study also the spin current and the corresponding spin transfer torque in $F_1/F_2/S$ structures.

arXiv comment13 pages including 10 figures

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Cited by in corpus (10)

• Superconducting spin-valve effect in heterostructures with ferromagnetic Heusler alloy layers
• Spin Transport in Half-Metallic Ferromagnet-Superconductor Junctions
• Superconducting triplet pairings and anisotropic magnetoresistance effects in ferromagnet/superconductor/ferromagnet double-barrier junctions
• Spin current and spin transfer torque in ferromagnet/superconductor spin valves
• Spin-split conductance and subgap peak in ferromagnet/superconductor spin valve heterostructures
• Superconducting spin valves based on antiferromagnet/superconductor/antiferromagnet heterostructures
• Quasiparticle conductance in Spin Valve Josephson Structures
• Bias current dependence of superconducting transition temperature in superconducting spin valve nanowires
• Inverse proximity effect in thin-film superconductor/magnet heterostructures with metallic and insulating magnets
• Triplet correlations in superconductor/antiferromagnet heterostructures: dependence on type of antiferromagnetic ordering