Single crystal growth and characterization of GdRhSi
arXiv:1612.00781 · doi:10.1016/j.jcrysgro.2015.02.079
Abstract
High-temperature indium flux growth was applied to prepare single crystals of GdRhSi by a modified Bridgman method leading to mm-sized single crystals with a platelet habitus. Specific heat and susceptibility data of GdRhSi exhibit a pronounced anomaly at , where the AFM ordering sets in. Magnetic measurements on the single crystals were performed down to \,K in external fields from B = 0 - 9\,T applied along the -, - and -direction of the tetragonal lattice. The effective magnetic moment determined from a Curie-Weiss fit agrees well with values from literature, and is larger than the theoretically predicted value. Electrical transport data recorded for current flow parallel and perpendicular to the -direction show a large anisotropy below . The residual resistivity ratio demonstrates that we succeeded in preparing high-quality crystals using high-temperature indium flux-growth.
References in corpus (3)
Cited by in corpus (7)
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