Single crystal growth and characterization of GdRh${}_2$Si${}_2$

Abstract

High-temperature indium flux growth was applied to prepare single crystals of GdRh${}_2$Si${}_2$ by a modified Bridgman method leading to mm-sized single crystals with a platelet habitus. Specific heat and susceptibility data of GdRh${}_2$Si${}_2$ exhibit a pronounced anomaly at $T_N=107\mathrm{K}$, where the AFM ordering sets in. Magnetic measurements on the single crystals were performed down to $T=2$\,K in external fields from B = 0 - 9\,T applied along the $[100]$-, $[110]$- and $[001]$-direction of the tetragonal lattice. The effective magnetic moment determined from a Curie-Weiss fit agrees well with values from literature, and is larger than the theoretically predicted value. Electrical transport data recorded for current flow parallel and perpendicular to the $[001]$-direction show a large anisotropy below $T_N$. The residual resistivity ratio $\mathrm{RRR}={\rho }_{300K}/{\rho }_0\sim 23$ demonstrates that we succeeded in preparing high-quality crystals using high-temperature indium flux-growth.

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