Valley-Selective Landau-Zener Oscillations in Semi-Dirac p-n Junctions
arXiv:1611.10356 · doi:10.1103/PhysRevB.96.045424
Abstract
We study transport across p-n junctions of gapped two-dimensional semi-Dirac materials: nodal semimetals whose energy bands disperse quadratically and linearly along distinct crystal axes. The resulting electronic properties --- relevant to materials such as TiO/VO multilayers and -(BEDT-TTF)I salts --- continuously interpolate between those of mono- and bi-layer graphene as a function of propagation angle. We demonstrate that tunneling across the junction depends on the orientation of the tunnel barrier relative to the crystalline axes, leading to strongly non-monotonic current-voltage characteristics, including negative differential conductance in some regimes. In multi-valley systems these features provide a natural route to engineering valley-selective transport.
7 pages, 7 figures, appendices
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