Precision calculation of energy levels for four-valent Si I

Abstract

We report results of the calculation of the low-lying levels of neutral Si using a combination of the configuration interaction and many-body perturbation theory (CI+MBPT method). We treat Si I as an atom with four valence electrons and use two different starting approximations, namely $V^{N-2}$ and $V^{N-4}$. We conclude that both approximations provide comparable accuracy, on the level of 1%.

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Cited by in corpus (1)

• Calculations of the atomic structure for the low-lying states of actinium