Phase diagram of electronic systems with quadratic Fermi nodes in : expansion, expansion, and functional renormalization group
arXiv:1611.04594 · doi:10.1103/PhysRevB.95.075101
Abstract
Several materials in the regime of strong spin-orbit interaction such as HgTe, the pyrochlore iridate PrIrO, and the half-Heusler compound LaPtBi, as well as various systems related to these three prototype materials, are believed to host a quadratic band touching point at the Fermi level. Recently, it has been proposed that such a three-dimensional gapless state is unstable to a Mott-insulating ground state at low temperatures when the number of band touching points at the Fermi level is smaller than a certain critical number . We further substantiate and quantify this scenario by various approaches. Using expansion near two spatial dimensions, we show that and demonstrate that the instability for is towards a nematic ground state that can be understood as if the system were under (dynamically generated) uniaxial strain. We also propose a truncation of the functional renormalization group equations in the dynamical bosonization scheme which we show to agree to one-loop order with the results from expansion both near two as well as near four dimensions, and which smoothly interpolates between these two perturbatively accessible limits for general . Directly in we therewith find , and thus again above the physical . All these results are consistent with the prediction that the interacting ground state of pure, unstrained HgTe, and possibly also PrIrO, is a strong topological insulator with a dynamically-generated gap -- a topological Mott insulator.
16 pages, 7 figures; v2: additional reference, published version
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