Resonant subgap current transport in Josephson field effect transistor

Abstract

We study theoretically the current-voltage characteristics (IVCs) of the Josephson field effect transistor - a ballistic SNINS junction with superconducting (S) electrodes confining a planar normal metal region (N), which is controlled by the gate induced potential barrier (I). The calculations were performed using the computation technique developed earlier for long single-channel junctions in the coherent multiple Andreev reflections (MAR) regime. We find significant difference of the subgap current structure in these junctions compared to the subharmonic gap structure in tunnel junctions and atomic-size point contacts. For long junctions, whose length significantly exceeds the coherence length, the IVC exhibits current peaks at multiples (harmonics) of the difference ${\delta }_m$ between the static Andreev levels, $e{V}_n=n{\delta }_m$. Moreover, the averaged IVC follows the power rather than exponential behavior, and has a universal scaling with the junction transparency. This result is qualitatively understood using an analytical approach based on the concept of resonant MAR trajectories. In shorter junctions whose length is comparable to the coherence length, the IVC has an exponential form common for point contacts, however the current structures appear at the subharmonics of the Andreev interlevel distance, $e{V}_n={\delta }_m/n$ rather than the gap subharmonics $2\Delta /n$.

arXiv comment10 pages, 11 figures, submitted to Phys. Rev. B

References in corpus (9)

• Hamiltonian approach to the transport properties of superconducting quantum point contacts
• AC JOSEPHSON EFFECT IN A SINGLE QUANTUM CHANNEL
• Theory of AC Josepson Effect in Superconducting Constrictions
• Coherent multiple Andreev reflections and current resonances in SNS junctions
• Subgap current in superconducting tunnel junctions with diffusive electrodes
• Multiple Andreev reflections as a transport problem in energy space
• Dissipative charge transport in diffusive superconducting double-barrier junctions
• Coherent current transport in wide ballistic Josephson junctions
• Current-voltage characteristics of asymmetric double-barrier Josephson junctions

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• Investigation of InAs based devices for topological applications
• Gate-controlled Supercurrent in Ballistic InSb Nanoflag Josephson Junctions
• The effect of an external magnetic field on the maximum current of SNINS junctions near the critical temperature