Low Carrier Density Metal Realized in Candidate Line-Node Dirac Semimetals CaAgP and CaAgAs
arXiv:1611.00490 · doi:10.7566/JPSJ.85.123701
Abstract
We study polycrystalline samples of the hexagonal pnictides, CaAgP and CaAgAs, both of which are ideal candidates for line-node Dirac semimetals. The polycrystalline samples of CaAgP and CaAgAs obtained in this study are low-carrier metals, where hole carriers are dominant. By combining the hole carrier densities estimated from Hall coefficients and the electronic structures calculated by first principles calculations, both samples are found to have a ring-torus Fermi surface, derived from a ring-shaped Dirac line node. In the phosphide sample, the Fermi energy EF is located at around the end of the linear dispersion region of the electronic bands, while the EF in the arsenide sample exists in the middle of this region, suggesting that the arsenide is a more promising system for uncovering the physics of line-node Dirac semimetals.
6 pages, 5 figures
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- Topological surface superconductivity in doped Weyl loop materials
- Quantum oscillations probe the Fermi surface topology of the nodal-line semimetal CaAgAs
- Universal phase transition and band structures for spinless nodal-line and Weyl semimetals
- Nodal-line semimetals from Weyl superlattices
- Nodal topological superconductivity in nodal-line semimetals
- High-Mobility Carriers Induced by Chemical Doping in the Candidate Nodal-Line Semimetal CaAgP
- Real spin and pseudospin topologies in the noncentrosymmetric topological nodal-line semimetal CaAgAs
- Quantized Hall conductance in 3D topological nodal-line semimetals without chiral symmetry
- Unusual Resistive Transitions in the Nodal-Line Semimetallic Superconductor NaAlSi
- Delocalization of topological surface states by diagonal disorder in nodal loop semimetals
- Pseudogap Formation in the Nodal-Line Semimetal NaAlGe
- Disorder induced dynamical interband response in Dirac nodal line semimetals