Optical beam shifts in graphene and single-layer boron-nitride

Abstract

Optical beam shifts from a free-standing two-dimensional atomic crystal are investigated. In contrast to a three-dimensional crystal the magnitude of the Goos-H$\ddot{\mathrm{a}}$nchen shift depends on the surface susceptibility of the crystal and not on the wavelength of the incident light beam. The surface conductivity of the atomically thin crystal is less important in this context because it enters in the expression of the shifts only as a second order parameter. In analogy to a three-dimensional crystal the magnitudes of the Imbert-Fedorov shift and of the angular shifts depend respectively on the wavelength and on the square of the beam angular aperture.

Keywords: Goos Hanchen, Imbert Fedorov, graphene, monolayer, Boron Nitride, spin Hall effect of light, metasurfaces

References in corpus (10)

• Electric Field Effect in Atomically Thin Carbon Films
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Cited by in corpus (2)

• Observation of the Goos-Hänchen shift in graphene via weak measurements
• Giant quantized Goos-Hänchen effect on the surface of graphene in quantum Hall regime