Doping Effects on the Electronic Structure of an Anisotropic Kondo Semiconductor CeOsAl: An Optical Study with Re and Ir Substitution
arXiv:1610.05880 · doi:10.7566/JPSJ.85.123705
Abstract
An anisotropic Kondo semiconductor CeOsAl exhibits an unusual antiferromagnetic order at rather high transition temperature of 28.5 K. Two possible origins of the magnetic order have been proposed so far, one is the Kondo coupling of the hybridization between the conduction () and the states and the other is the charge-density wave/charge ordering along the orthorhombic axis. To clarify the origin of the magnetic order, we have investigated the electronic structure of hole- and electron-doped CeOsAl [Ce(OsRe)Al and Ce(OsIr)Al, respectively] by using optical conductivity spectra along the axis. The intensity of the - hybridization gap at meV continuously decreases from to via . The intensity of the charge excitation observed at meV has the maximum at as similar with the doping dependence of . The fact that the charge excitation is strongly related to the magnetic order strengthens the possibility of the charge density wave/charge ordering as the origin of the magnetic order.
5 pages, 3 figures, to be published in J. Phys. Soc. Jpn