Monolithic CMOS-compatible zero-index metamaterials

Abstract

Zero-index materials exhibit exotic optical properties that can be utilized for integrated-optics applications. However, practical implementation requires compatibility with complementary metallic-oxide-semiconductor (CMOS) technologies. We demonstrate a CMOS-compatible zero-index metamaterial consisting of a square array of air holes in a 220-nm-thick silicon-on-insulator (SOI) wafer. This design is achieved through a Dirac-cone dispersion. The metamaterial is entirely composed of silicon and offers compatibility through low-aspect-ratio structures that can be simply fabricated in a standard device layer. This platform enables mass adoption and exploration of zero-index-based photonic devices at low cost and high fidelity.

18 pages, 4 figures

References in corpus (3)

• The Origin of Anomalous Low-Temperature Downturns in the Thermal Conductivity of Cuprates
• Realization of Zero-Refractive-Index Lens with Ultralow Spherical Aberration
• On-chip all-dielectric fabrication-tolerant zero-index metamaterials

Cited by in corpus (6)

• Zero-index bound states in the continuum
• Beyond the perturbative description of the nonlinear optical response of low-index materials
• Low-loss Zero-Index Materials
• Topology-optimized Dual-Polarization Dirac Cones
• Relaxed phase-matching constraints in zero-index waveguides
• Attaining near-ideal Dicke superradiance in expanded spatial domains