Band Offset in (Ga,In)As/Ga(As,Sb) Heterostructures

Abstract

A series of (Ga,In)As/GaAs/Ga(As,Sb) multi-quantum well heterostructures is analyzed using temperature- and power-dependent photoluminescence (PL) spectroscopy. Pronounced PL variations with sample temperature are observed and analyzed using microscopic many-body theory and band structure calculations based on the k$\cdot$p method. This theory-experiment comparison reveals an unusual, temperature dependent variation of the band alignment between the (Ga,In)As and Ga(As,Sb) quantum wells.

6 pages, 8 figures

Cited by in corpus (1)

• The influence of growth interruption on the luminescence properties of Ga(As,Sb)-based type II heterostructures